View 2SB1162_2286413.PDF datasheet online --- IC-ON-LINE

Datasheet File OCR Text:

jmnic product specification silicon pnp power transistors 2SB1162 description ? with to-3pl package ? complement to type 2sd1717 ? excellent linearity of h fe ? wide area of safe operation (aso) ? high transition frequency f t applications ? for high power amplifier applications pinning pin description 1 base 2 collector;connected to mounting base 3 emitter absolute maximum ratings(ta=25 ?? ) symbol parameter conditions value unit v cbo collector-base voltage open emitter -160 v v ceo collector-emitter voltage open base -160 v v ebo emitter-base voltage open collector -5 v i c collector current -12 a i cm collector current-peak -20 a 3.5 p c collector power dissipation t c =25 ?? 120 w t j junction temperature 150 ?? t stg storage temperature -55~150 ?? fig.1 simplified outline (to-3pl) and symbol
jmnic product specification 2 silicon pnp power transistors 2SB1162 characteristics tj=25 ?? unless otherwise specified symbol parameter conditions min typ. max unit v cesat collector-emitter saturation voltage i c =-8a ;i b =-0.8a -2.0 v v be base-emitter voltage i c =-8a ; v ce =-5v -1.8 v i cbo collector cut-off current v cb =-160v; i e =0 -50 | a i ebo emitter cut-off current v eb =-3v; i c =0 -50 | a h fe-1 dc current gain i c =-20ma ; v ce =-5v 20 h fe-2 dc current gain i c =-1a ; v ce =-5v 60 200 h fe-3 dc current gain i c =-8a ; v ce =-5v 20 f t transition fre quenc y i c =-0.5a ; v ce =-5v 20 mhz c ob collector output capacitance f=1mhz;v cb =-10v 210 pf ? h fe-2 classifications q s p 60-120 80-160 100-200
jmnic product specification 3 silicon pnp power transistors 2SB1162 package outline fig.2 outline dimensions (unindicated tolerance: ? 0.50 mm)

▲Up To Search▲

Price & Availability of 2SB1162

	To Download 2SB1162 Datasheet File
If you can't view the Datasheet, Please click here to try to view without PDF Reader .